Product Summary

The BC857C is a PNP general purpose transistor designed for general purpose switching and amplification.

Parametrics

BC857C absolute maximum ratings: (1)VCBO, collector-base voltage at open emitter: -50v max; (2)VCEO, collector-emitter voltage at open base: -45V max; (3)VEBO, emitter-base voltage at open collector: -5V max; (4)IC, collector current (DC): -100mA max; (5)ICM, peak collector current: -200mA max; (6)IBM, peak base current: -200mA max; (7)Ptot, total power dissipation at Tamb ≤ 25 ℃: 250mW max; (8)Tstg, storage temperature: -65 to +150℃; (9)Tj, junction temperature: 150℃ max; (10)Tamb, operating ambient temperature: -65 to +150℃.

Features

BC857C features: (1)low current (max. 100 mA); (2)low voltage (max. 65 V).

Diagrams

 BC857C outline and symbol

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BC857C
BC857C
Taiwan Semiconductor
Transistors Bipolar (BJT) Transistor 200mW
Data Sheet
0-3000: $0.01
3000-6000: $0.01
BC857C /T3
BC857C /T3
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-13
Data Sheet
Negotiable 
BC857C,215
BC857C,215
NXP Semiconductors
Transistors Bipolar (BJT) PNP GP 45V 100mA
Data Sheet
0-1: $0.03
1-25: $0.01
25-100: $0.01
100-250: $0.01
BC857C,235
BC857C,235
NXP Semiconductors
Transistors Bipolar (BJT) TRANS GP TAPE-13
Data Sheet
0-1: $0.08
1-25: $0.07
25-100: $0.05
100-250: $0.03
BC857C_D87Z
BC857C_D87Z
Fairchild Semiconductor
Transistors Bipolar (BJT) SOT-23 PNP GP AMP
Data Sheet
Negotiable 
BC857C-7
BC857C-7
Diodes Inc.
Transistors Bipolar (BJT) PNP BIPOLAR
Data Sheet
Negotiable 
BC857C-7-F
BC857C-7-F
Diodes Inc.
Transistors Bipolar (BJT) BIPOLAR TRANSISTOR PNP SOT-23
Data Sheet
0-1: $0.06
1-10: $0.05
10-100: $0.03
100-500: $0.02
BC857CDW1T1
BC857CDW1T1
ON Semiconductor
Transistors Bipolar (BJT) 100mA 50V Dual PNP
Data Sheet
Negotiable