Product Summary

The BC857C is a PNP general purpose transistor designed for general purpose switching and amplification.

Parametrics

BC857C absolute maximum ratings: (1)VCBO, collector-base voltage at open emitter: -50v max; (2)VCEO, collector-emitter voltage at open base: -45V max; (3)VEBO, emitter-base voltage at open collector: -5V max; (4)IC, collector current (DC): -100mA max; (5)ICM, peak collector current: -200mA max; (6)IBM, peak base current: -200mA max; (7)Ptot, total power dissipation at Tamb ≤ 25 ℃: 250mW max; (8)Tstg, storage temperature: -65 to +150℃; (9)Tj, junction temperature: 150℃ max; (10)Tamb, operating ambient temperature: -65 to +150℃.

Features

BC857C features: (1)low current (max. 100 mA); (2)low voltage (max. 65 V).

Diagrams

 BC857C outline and symbol

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BC857C
BC857C

Taiwan Semiconductor

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Data Sheet

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3000-6000: $0.01
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NXP Semiconductors

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Data Sheet

0-1: $0.03
1-25: $0.01
25-100: $0.01
100-250: $0.01
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NXP Semiconductors

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Data Sheet

0-1: $0.08
1-25: $0.07
25-100: $0.05
100-250: $0.03
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Fairchild Semiconductor

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Data Sheet

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Data Sheet

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Diodes Inc.

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Data Sheet

0-1: $0.06
1-10: $0.05
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100-500: $0.02
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ON Semiconductor

Transistors Bipolar (BJT) 100mA 50V Dual PNP

Data Sheet

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BC857CDW1T1G
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ON Semiconductor

Transistors Bipolar (BJT) 100mA 50V Dual PNP

Data Sheet

0-1: $0.16
1-25: $0.14
25-100: $0.10
100-500: $0.08