Product Summary
The IRFP9240PBF is a Third Generation HEXFET from International Rectifier. The IRFP9240PBF provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. The IRFP9240PBF also provides greater creepage distance between pins to meets the requirements of most safety specifications.
Parametrics
IRFP9240PBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: -12A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: -7.5A; (3)Pulsed Drain Current, IDM: -48A; (4)PD @TC = 25℃, Power Dissipation: 150W; (5)Linear Derating Factor: 1.2 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Single Pulse Avalanche Energy, EAS: 790mJ; (8)Avalanche Current, IAR: -12 A; (9)Repetitive Avalanche Energy, EAR: 15 mJ; (10)Peak Diode Recovery dv/dt, dv/dt: -5 V/ns; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (12)Soldering Temperature, for 10 seconds 300℃ (1.6mm from case); (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).
Features
IRFP9240PBF features: (1)Dynamic dv/dt Rating; (2)Repetitive avalanche rated; (3); (4)Isolated central mounting hole; (5)Fast Switching; (6)Ease of paralleling; (7)Simple drive requirements; (8)Lead-Free.
Diagrams
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![]() MOSFET P-Chan 200V 12 Amp |
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