Product Summary

The MRF421 is an NPN silicon rf power transistor. It is designed for applications as a high–power linear amplifier from 2.0 to 30 MHz.

Parametrics

MRF421 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 20 Vdc; (2)Collector–Base Voltage VCBO: 45 Vdc; (3)Emitter–Base Voltage VEBO: 3.0 Vdc; (4)Collector Current Continuous IC: 20 Adc; (5)Withstand Current 10 s: 30 Adc; (6)Total Device Dissipation @ TC = 25℃ PD: 290Watts; Derate above 25℃: 1.66W/℃; (7)Storage Temperature Range Tstg: –65 to +150 ℃.

Features

MRF421 features: (1)Specified 12.5 Volt, 30 MHz Characteristics, Output Power = 100 W (PEP), Minimum Gain = 10 dB, Efficiency = 40%; (2)Intermodulation Distortion @ 100 W (PEP), IMD = -30 dB (Min); (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR.

Diagrams

 MRF421 diagram

Image Part No Mfg Description Data Sheet Download Pricing
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MRF421
MRF421

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Data Sheet

0-1: $6.60
1-10: $6.00
10-25: $5.85
25-50: $5.40
50-100: $5.10
100-250: $4.65
250-500: $4.35
500-1000: $3.99
1000-5000: $3.90
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0-1: $6.86
1-25: $5.97
25-50: $5.86
50-100: $5.50
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M/A-COM Technology Solutions

Transistors RF Bipolar Power 2-30MHz 150Watts 28Volt Gain 10dB

Data Sheet

0-1: $46.18
1-10: $44.64
10-25: $43.10
25-50: $41.56