Product Summary
The BSM100GB120DLCK is an IGBT-inverter.
Parametrics
BSM100GB120DLCK absolute maximum ratings: (1) collector-emitter voltage: 1200V; (2) DC-collector current: 205A; (3) repetitive peak collector current: 200A; (4) total power dissipation: 835W; (5) gate-emitter peak voltage: ±20V.
Features
BSM100GB120DLCK features: (1) VCE: 2.60V; (2) VGE: 4.5V to 6.5V; (3) QG: 1.10μC; (4) RGint: 5.0Ω; (5) Gres: 0.5nF; (6) IGES: 400nA; (7) ICES: 5.0mA.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() BSM100GB120DLCK |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A DUAL |
![]() Data Sheet |
![]()
|
|
||||||||||||
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
![]() |
![]() BSM100GAL120DLCK |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A CHOPPER |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() BSM100GAL120DN2 |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A CHOPPER |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() BSM100GAR120DN2 |
![]() Infineon Technologies |
![]() IGBT Transistors 1200V 100A DUAL |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() BSM100GB120DLC |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A DUAL |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() BSM100GB120DLCK |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A DUAL |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() BSM100GB120DN2 |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A DUAL |
![]() Data Sheet |
![]()
|
|