Product Summary

The BSM75GB120DN2 is an IGBT power Module.

Parametrics

BSM75GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kΩ VCGR: 1200 V; (3)Gate-emitter voltage VGE: ± 20 V; (4)DC collector current TC = 25℃ IC: 105 A; (5)DC collector current TC = 80℃ IC: 75 A; (6)Pulsed collector current, tp = 1 ms TC = 25℃ ICpuls: 210 A; (7)Pulsed collector current, tp = 1 ms TC = 80℃ ICpuls: 150 A; (8)Power dissipation per IGBT TC = 25℃ Ptot: 625 W; (9)Chip temperature Tj: + 150℃; (10)Storage temperature Tstg: -40℃ to + 125℃.

Features

BSM75GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM75GB120DN2 package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM75GB120DN2
BSM75GB120DN2
Infineon Technologies
IGBT Modules 1200V 75A DUAL
Data Sheet
0-1: $45.58
1-10: $41.02
BSM75GB120DN2_E3223
BSM75GB120DN2_E3223
Infineon Technologies
IGBT Modules N-CH 1.2KV 105A
Data Sheet
0-8: $41.48
8-10: $39.89
BSM75GB120DN2_E3223c-Se
BSM75GB120DN2_E3223c-Se
Infineon Technologies
IGBT Modules IGBT 1200V 75A
Data Sheet
0-6: $67.20
6-10: $60.60