DS1230Y-200

Nonvolatile SRAM, 70 ns, 7.0V, DIP

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Price:: US $2.50~5.00 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 50 :	5.00 / Piece
51 ~ 500 :	4.00 / Piece
501 ~ 5000 :	2.50 / Piece

PartNumber:: DS1230Y-200

Brand:: DALLAS - DALLAS | Pack: DIP | D/C: 11+

Availability:: Supply Ability: 50000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2013-03-25

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Part Number:DS1230Y-200
US $2.50 - 5.00
Quantity:

piece

Product Summary

The DS1230Y-200 is a Nonvolatile SRAM which is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230Y-200 can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230Y-200 in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Parametrics

DS1230Y-200 absolute maximum ratings: (1)Voltage on Any Pin Relative to Ground: -0.3V to +7.0V; (2)Operating Temperature: 0℃ to 70℃, -40℃ to +85℃ for IND parts; (3)Storage Temperature: -40℃ to +70℃, -40℃ to +85℃ for IND parts; (4)Soldering Temperature: 260℃ for 10 seconds.

Features

DS1230Y-200 features: (1)10 years minimum data retention in the absence of external power; (2)Data is automatically protected during power loss; (3)Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory; (4)Unlimited write cycles; (5)Low-power CMOS; (6)Read and write access times as fast as 70 ns.