Product Summary
                                                  	The BSM100GP60 is an IGBT-Module.
                                                  
Parametrics
BSM100GP60 absolute maximum ratings: (1)repetitive peak reverse voltage: 1200 V; (2)RMS forward current per chip: 40 A; (3)DC forward current: 10 A at TC = 80℃; (4)surge forward current: 300 A at tP = 10 ms, Tvj = 25℃, 230 A at tP = 10 ms, Tvj = 150℃; (5)I2t - value: 450 A2s at tP = 10 ms, Tvj = 25℃, 260 A2s at tP = 10 ms, Tvj = 150℃.
Features
BSM100GP60 features: (1)internal insulation: Al2O3; (2)comperative tracking index: 225; (3)mounting torque: 3±10% Nm; (4)weight: 180g.
Diagrams

| Image | Part No | Mfg | Description |  | Pricing (USD) | Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|  |  BSM100GP60 |  Infineon Technologies |  IGBT Modules 600V 100A PIM |  Data Sheet |  
 |  | ||||||||||||
| Image | Part No | Mfg | Description |  | Pricing (USD) | Quantity | ||||||||||||
|  |  BSM100GAL120DLCK |  Infineon Technologies |  IGBT Modules 1200V 100A CHOPPER |  Data Sheet |  
 |  | ||||||||||||
|  |  BSM100GAL120DN2 |  Infineon Technologies |  IGBT Modules 1200V 100A CHOPPER |  Data Sheet |  Negotiable |  | ||||||||||||
|  |  BSM100GAR120DN2 |  Infineon Technologies |  IGBT Transistors 1200V 100A DUAL |  Data Sheet |  Negotiable |  | ||||||||||||
|  |  BSM100GB120DLC |  Infineon Technologies |  IGBT Modules 1200V 100A DUAL |  Data Sheet |  
 |  | ||||||||||||
|  |  BSM100GB120DLCK |  Infineon Technologies |  IGBT Modules 1200V 100A DUAL |  Data Sheet |  
 |  | ||||||||||||
|  |  BSM100GB120DN2 |  Infineon Technologies |  IGBT Modules 1200V 100A DUAL |  Data Sheet |  
 |  | ||||||||||||
 (China (Mainland))
 (China (Mainland)) 
                         
                        
 
                                    




