Product Summary
The BSM50GB120DLC is an IGBT-Module.
Parametrics
BSM50GB120DLC absolute maximum ratings: (1)collector-emitter voltage Tvj= 25℃ VCES: 1200 V; (2)DC-collector current TC = 25 ℃ IC: 115 A; (3)repetitive peak collector current tP = 1 ms, TC = 80℃ ICRM: 100 A; (4)total power dissipation TC=25℃, Transistor Ptot: 460 W; (5)gate-emitter peak voltage VGES: +/- 20V; (6)DC forward current IF: 50 A; (7)repetitive peak forw. current tP = 1 ms IFRM: 100 A; (8)I2t - value, Diode: 430 A2s; (9)insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL: 2,5 kV.
Features
BSM50GB120DLC features: (1)collector-emitter saturation voltage IC = 50A, VGE = 15V, Tvj = 125℃: - 2,4 to 2,9 V; (2)gate threshold voltage IC = 2mA, VCE = VGE, Tvj = 25℃ VGE(th): 4,5 to 6,5 V; (3)gate charge VGE = -15V to +15V QG: 0,53 - μC; (4)input capacitance f = 1MHz,Tvj = 25℃, VCE = 25V, VGE = 0V Cies: 3,3 nF; (5)reverse transfer capacitance f = 1MHz, Tvj = 25℃, VCE = 25V, VGE = 0V Cres: 0,21 nF; (6)collector-emitter cut-off current: 5mA; (7)gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25℃ IGES: 400 nA.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM50GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 50A DUAL |
Data Sheet |
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BSM50GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 50A DUAL |
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