Product Summary

The BSM75GB60DLC is an IGBT Module.

Parametrics

BSM75GB60DLC absolute maximum ratings: (1)collector-emitter voltage VCES: 600 V; (2)DC-collector current Tc= 25℃ IC: 100 A; (3)repetitive peak collector current tP= 1ms, Tc= 75℃ ICRM: 150 A; (4)total power dissipation Tc= 25℃, Transistor Ptot: 355 W; (5)gate-emitter peak voltage VGES : ±20 V; (6)DC forward current IF: 75 A; (7)repetitive peak forw. current tP= 1ms IFRM: 150 A.

Features

BSM75GB60DLC features: (1)collector-emitter saturation voltage IC= 75A, VGE= 15V, Tvj= 125℃ VCE sat: 2.20 V; (2)gate threshold voltage IC= 1,5mA, VCE= VGE, Tvj= 25℃ VGE(th): 4.5 to 6.5 V; (3)input capacitance f= 1MHz, Tvj= 25℃, VCE= 25V, VGE= 0V Cies: 3.3 nF; (4)reverse transfer capacitance f= 1MHz, Tvj= 25℃, VCE= 25V, VGE= 0V Cres: 0.3 nF; (5)collector-emitter cut-off current VCE= 600V, VGE= 0V, Tvj= 125℃ ICES: 1 mA; (6)gate-emitter leakage current VCE= 0V, VGE= 20V, Tvj= 25℃ IGES: 400 nA.

Diagrams

BSM75GB60DLC block diagram

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