(China (Mainland))
Product Summary
The FS50R12KT3 is an IGBT module.
Parametrics
FS50R12KT3 absolute maximum ratings: (1)collector-emitter voltage, VCES: 1200V; (2)DC-collector current, IC: 50A; (3)repetitive peak collector current, ICRM: 100A; (4)total power dissipation, Ptot 280W; (5)gate-emitter peak voltage, VGES: +/-20V.
Features
FS50R12KT3 features: (1)forward voltage ,VF: 1.65V; (2)peak reverse recovery current, IRM: 67A; (3)recovery charge, Qr: 5.60μC; (4)reverse recovery enery, Erec: 2.20mJ; (5)thermal resistance, junction to case, RthJC: 0.75K/W.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 FS50R12KT3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 75A |
Data Sheet |
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Quantity | ||||||||
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FS50AS-03 |
Other |
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Data Sheet |
Negotiable |
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FS50ASJ-03 |
Other |
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Data Sheet |
Negotiable |
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FS50KM-06 |
Other |
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Data Sheet |
Negotiable |
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FS50KM-2 |
Other |
|
Data Sheet |
Negotiable |
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FS50KM-3 |
Other |
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Data Sheet |
Negotiable |
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FS50KMJ-03 |
Other |
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Data Sheet |
Negotiable |
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