(China (Mainland))
Product Summary
The FS75R12KE3G is an IGBT-Module.
Parametrics
FS75R12KE3G absolute maximum ratings: (1)collector emitter voltage: 1200V; (2)DC forward current: 75A; (3)repetitive peak collector current: 150A; (4)gate emitter peak voltage: ±20V; (5)repetitive peak forward current: 150A; (6)DC collector current: 100A; (7)total power dissipation: 350W; (8)insulation test voltage: 2.5KV.
Features
FS75R12KE3G features: (1)rated resistance: 5kΩ; (2)deviation of R100: -5% to 5%; (3)power dissipation: 20mW; (4)B-value: 3375K.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FS75R12KE3G |
Infineon Technologies |
IGBT Modules 1200V 75A 3-PHASE |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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FS75-8-5K3 |
Panduit |
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Data Sheet |
Negotiable |
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FS75-8-DSL3 |
Panduit |
Terminals 20 AWG ORANGE SOLD PER 50 PC STRIP |
Data Sheet |
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FS75R06KE3 |
Infineon Technologies |
IGBT Modules IGBT-MODULES 600V |
Data Sheet |
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FS75R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 75A 3-PHASE |
Data Sheet |
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FS75R12KE3_B3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 100A |
Data Sheet |
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FS75R12KE3G |
Infineon Technologies |
IGBT Modules 1200V 75A 3-PHASE |
Data Sheet |
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