(China (Mainland))
Product Summary
The INA-02186 is a low-noise silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) feedback amplifier housed in low cost plastic packages. It is designed for narrow or wide bandwidth commercial applications that require high gain and low noise IF or RF amplification. The INA-02186 is fabricated using HP’s 10 GHz fT, 25 GHz fMAX, ISOSAT-I silicon bipolar process which uses nitride self-alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide intermetal dielectric and scratch protection of the INA-02186 to achieve excellent performance, uniformity and reliability.
Parametrics
INA-02186 absolute maximum ratings: (1)Device Current: 50 mA; (2)Power Dissipation: 400 mW; (3)RF Input Power: +13 dBm; (4)Junction Temperature: +150℃; (5)Storage Temperature: 65 to 150℃.
Features
INA-02186 features: (1)Cascadable 50 Gain Block; (2)Low Noise Figure: 2.0 dB Typical at 0.5 GHz; (3)High Gain: 31 dB Typical at 0.5 GHz, 26 dB Typical at 1.5 GHz; (4)3 dB Bandwidth: DC to 0.8 GHz; (5)Unconditionally Stable (k>1); (6)Low Cost Plastic Package.
Diagrams
| Image | Part No | Mfg | Description |  |
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 INA-02186 |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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INA-02186 |
Other |
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Data Sheet |
Negotiable |
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INA-03100 |
Other |
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INA-03170 |
Other |
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Negotiable |
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INA-03184 |
Other |
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Negotiable |
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INA-10386 |
Other |
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Data Sheet |
Negotiable |
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INA-12063 |
Other |
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Data Sheet |
Negotiable |
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