CM200DY-12H

high power switching IGBT module, 200 Amperes, 600 Volts, Low Drive Power, High Frequency Operation

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Price:: US $40.00~60.00 / piece [Get Latest Price]

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	US $40.00~60.00

PartNumber:: CM200DY-12H

Brand:: Mitsubishi Electric Semiconductor - MES | Pack: DIP | D/C: 08+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-07-07

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Part Number:CM200DY-12H
US $40.00 - 60.00
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Product Summary

The CM200DY-12H is a high power switching IGBT module. It is designed for use in switching applications. The module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. The applications of the CM200DY-12H include: AC Motor Control, Motion/Servo Control, UPS, Welding Power Supplies.

Parametrics

CM200DY-12H absolute maximim ratings: (1)Junction Temperature Tj: -40 to 150 ℃; (2)Storage Temperature Tstg: -40 to 125 ℃; (3)Collector-Emitter Voltage (G-E SHORT) VCES: 600 Volts; (4)Gate-Emitter Voltage (C-E SHORT) VGES: ±20 Volts; (5)Collector Current (Tc = 25℃) IC: 200 Amperes; (6)Peak Collector Current (Tj ≤ 150℃) ICM: 400* Amperes; (7)Emitter Current** (Tc = 25℃) IE: 200 Amperes; (8)Peak Emitter Current** IEM: 400* Amperes; (9)Maximum Collector Dissipation (Tc = 25℃) Pc: 780 Watts.

Features

CM200DY-12H features: (1)Low Drive Power; (2)Low VCE(sat); (3)Discrete Super-Fast Recovery Free-Wheel Diode; (4)High Frequency Operation; (5)Isolated Baseplate for Easy Heat Sinking.