(China (Mainland))
Product Summary
IXKN75N60C is an N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET.
Parametrics
IXKN75N60C absolute maximum ratings: (1)VDSS: TVJ = 25°C to 150°C 600 V; (2)VGS ± 20 V; (3)ID25: TC = 25°C 75A; (4)ID90: TC = 90°C 50A; (5)ID puls: pulse drain current, tp limited by TJmax 250 A; (6)EAS: ID = 10 A; L = 36 mH TC = 25°C 1.8J; (7)EAR: ID = 20 A; L = 5 mH TC = 25°C 1mJ; (8)dv/dt: VDS < VDSS; IF < 100A TVJ = 125°C 6 V/ns |diF /dt| < 100A/μs.
Features
IXKN75N60C features: (1)miniBLOC package; (2)Electrically isolated copper base; (3)Low coupling capacitance to the heatsink for reduced EMI; (4)High power dissipation due to AlN ceramic substrate; (5)International standard package SOT-227; (6)Easy screw assembly ; (7)Fast CoolMOS power MOSFET; (8)3rd generation; (9)High blocking capability; (10)Low on resistance; (11)Avalanche rated for unclamped inductive switching (UIS); (12)Low thermal resistance due to reduced chip thickness; (13)Enhanced total power density.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXKN75N60C |
Ixys |
MOSFET 75 Amps 600V |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
IXKN40N60C |
Ixys |
MOSFET 40 Amps 600V |
Data Sheet |
Negotiable |
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IXKN45N80C |
Ixys |
MOSFET 45 Amps 800V |
Data Sheet |
Negotiable |
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|
IXKN75N60C |
Ixys |
MOSFET 75 Amps 600V |
Data Sheet |
Negotiable |
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