SI2320DS-TI-E3

SI2320DS-TI-E3, N-Channel 200-V (D-S) MOSFET, 0.5A, 0.013 mJ, 5.8 to 7Ω, SOT-23

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PartNumber:: SI2320DS-TI-E3

Brand:: Vishay Siliconix - Vishay | Pack: SOT | D/C: 11+

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Products Upload time: 2012-01-29

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Product Summary

The SI2320DS-TI-E3 is an N-Channel 200-V (D-S) MOSFET.

Parametrics

SI2320DS-TI-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 200V; (2)Gate-Source Voltage VGS: 20V; (3)Pulsed Drain Currentb IDM: 0.5A; (4)Avalanche Current: 0.5A; (5)Single Avalanche Energy: 0.013 mJ; (6)Continuous Source Current (Diode Conduction) IS: 1 A; (7)Power Dissipation: 1.25W; (8)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150℃.

Features

SI2320DS-TI-E3 features: (1)Drain-Source Breakdown Voltage V(BR)DSS: 200V; (2)Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250μA: 2V; (3)Gate-Body Leakage IGSS: 100 nA; (4)Zero Gate Voltage Drain Current IDSS: 1μA; (5)On-State Drain Current: 0.5 A; (6)Drain-Source On-Resistance: 5.8 to 7Ω; (7)Forward Transconductance: 13 S; (8)Diode Forward Voltage VSD: 1.2 V.