(China (Mainland))
Product Summary
The BSM100GT120DN2 is an IGBT Power Module. The VCE is 1200V, and Ic is 150A. If you want to order this module, the ordering code is C67070-A2520-A67. There are three single switches in every module, including fast free-wheeling diodes and package terminals. What is more, every package has insulated metal base plate.
Parametrics
BSM100GT120DN2 absolute maximum ratings:(1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, RGE = 20 kW, VCGR: 1200; (3)Gate-emitter voltage, VGE: ± 20; (4)DC collector current, TC = 25 ℃, IC: 150A; (5)DC collector current, TC = 80 ℃, IC: 100A; (6)Pulsed collector current, tp = 1 ms, TC = 25 ℃, ICpuls: 300; (7)Pulsed collector current, tp = 1 ms, TC = 80 ℃, ICpuls: 200; (8)Power dissipation per IGBT, TC = 25 ℃, Ptot: 680W; (9)Chip temperature, Tj: + 150 ℃; (10)Storage temperature, Tstg: -55 to + 150; (11)Thermal resistance, chip case, RthJC: 0.182 K/W; (12)Diode thermal resistance, chip case, RthJCD: 0.36; (13)Insulation test voltage, t = 1min., Vis: 2500 Vac; (14)Creepage distance: 16 mm; (15)Clearance: 11; (16)DIN humidity category, DIN: 40 040 - F -; (17)IEC climatic category, DIN IEC 68-1: - 55 / 150 / 56.
Features
BSM100GT120DN2 features: (1)Three single switches; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate; (4)Solderable Terminals.
Diagrams
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 BSM100GT120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A TRIPACK |
Data Sheet |
Negotiable |
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BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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