Product Summary

The C458PD reverse blocking thyristor is suitable for inverter applications. The silicon junction is manufactured by the all-diffused process and utilizes the field-proven, interdigitated amplifying gate structure. C458PD is supplied in an industry accepted disc-type package, ready to mount using commercially available heat dissipators and mechanical clamping hardware.

Parametrics

C458PD absolute maximum ratings: (1)Repetitive peak off-state & reverse voltage: up to 1400V volts; (2)Off-state & reverse current, IDRM/IRRM: 65 ma; (3)Peak half cycle non-repetitive surge current, ITSM: 16 kA; (4)For fusing I2t: 1.06 MA2s; (5)On-state voltage VTM: 2.6 volts; (6)Critical rate of rise of on-state current: 400A/μs; (7)Critical rate of dv/dt: 500 v/us; (8)Reverse recovery charge: 400 uC; (9)Circuit commutated turn-off time: 35 us.

Features

C458PD features: (1)53mm; (2)1400V; (3)2000Arms; (4)35us.

Diagrams

C458PD pinout-circuits