Product Summary
The DS1250Y-100 is a 4096k Nonvolatile SRAM which is a 4,194,304-bit, fully static, nonvolatile SRAM organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1250 devices can be used in place of existing 512k x 8 static RAMs directly conforming to the popular byte-wide 32-pin DIP standard.
Parametrics
DS1250Y-100 absolute maximum ratings: (1)Voltage on Any Pin Relative to Ground: -0.3V to +7.0V; (2)Operating Temperature: 0℃ to 70℃, -40℃ to +85℃ for IND parts; (3)Storage Temperature: -40℃ to +70℃, -40℃ to +85℃ for IND parts; (4)Soldering Temperature: 260℃ for 10 seconds.
Features
DS1250Y-100 features: (1)10 years minimum data retention in the absence of external power; (2)Data is automatically protected during power loss; (3)Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory; (4)Unlimited write cycles; (5)Low-power CMOS; (6)Read and write access times as fast as 70 ns; (7)Lithium energy source is electrically disconnected to retain freshness until power is; (8)applied for the first time; (9)Full ±10% VCC operating range; (10)Optional industrial temperature range of -40℃ to +85℃, designated IND.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() DS1250Y-100 |
![]() Maxim Integrated Products |
![]() NVRAM 4096K NV SRAM |
![]() Data Sheet |
![]() Negotiable |
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![]() DS1250Y-100+ |
![]() Maxim Integrated Products |
![]() NVRAM 4096K NV SRAM |
![]() Data Sheet |
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![]() DS1250Y-100IND+ |
![]() Maxim Integrated Products |
![]() NVRAM 4096K NV SRAM |
![]() Data Sheet |
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![]() DS1250Y-100IND |
![]() Maxim Integrated Products |
![]() NVRAM |
![]() Data Sheet |
![]() Negotiable |
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