(China (Mainland))
Product Summary
The DS1270 is a 16M Nonvolatile SRAM. It is 16,777,216-bit, fully static nonvolatile SRAM organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit on the number of write cycles which can be executed and no additional support circuitry is required for microprocessor interfacing.
Parametrics
DS1270Y-100+ absolute maximum ratings: (1)Voltage on Any Pin Relative to Ground: -0.3V to +6.0V ; (2)Operating Temperature: 0℃ to 70℃; -40℃ to +85℃ for IND parts ; (3)Storage Temperature: -40℃ to +70℃; -40℃ to +85℃ for IND parts ; (4)Soldering Temperature: 260℃ for 10 seconds.
Features
DS1270Y-100+ features: (1)5 years minimum data retention in the absence of external power ; (2)Data is automatically protected during power loss ; (3)Unlimited write cycles ; (4)Low-power CMOS operation ; (5)Read and write access times as fast as 70 ns ; (6)Lithium energy source is electrically disconnected to retain freshness until power is ; (7)applied for the first time ; (8)Full ±10% VCC operating range (DS1270Y) ; (9)Optional ±5% VCC operating range (DS1270AB) ; (10)Optional industrial temperature range of -40℃ to +85℃, designated IND.
Diagrams
