Product Summary

The FF100R12YT3 is an IGBT-Module.

Parametrics

FF100R12YT3 absolute maximum ratings: (1)Collector-emitter voltage, VCES: 1200V; (2)DC-conllector current, TC=80℃, TVJ=150℃, ICnom: 100A; TC=25℃, TVJ=150℃, IC: 140A; (3)Repetitive peak collector current, TP=1ms, ICRM: 200A; (4)Total power dissipation, TC=25℃, Tvj=150℃, Ptot: 445W; (5)Gate-emitter peak voltage, VGES: ±20V.

Features

FF100R12YT3 features: (1)Collector-emitter saturation voltage, VCEsat: 1.70 to 2.15V; (2)Gate threshold voltage, VGEth: 5.0 to 6.5V; (3)Gate charge, QG: 0.95μC; (4)Internal gate resistor, RGint: 2.0Ω; (5)Input capacitance, Cies: 7.10nF; (6)Reverse transfer capacitance, Cres: 0.26nF; (7)Collector-emitter cut-off current, ICES: 1.0mA; (8)Gate-emitter leakage current, IGES: 400nA.

Diagrams

FF100R12YT3 block diagram

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