(China (Mainland))
Product Summary
The MG100J2YS40 is a Silicon N Channel IGBT.
Parametrics
MG100J2YS40 absolute maximum ratings: (1)Collector-emitter voltage VCES: 600 V; (2)Gate-emitter voltage VGES: ±20 V; (3)Reverse voltage VR: 600 V; (4)Collector power dissipation (Tc = 25℃) PC: 400 W; (5)Junction temperature Tj: 150 ℃; (6)Storage temperature range Tstg: -40 ~ 125 ℃.
Features
MG100J2YS40 features: (1)High input impedance; (2)High speed: tf = 0.35μs (max); trr = 0.15μs (max); (3)Low saturation voltage: VCE (sat) = 3.5V (max); (4)Enhancement-mode; (5)The electrodes are isolated from case.
Diagrams
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 MG100J2YS40 |
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Data Sheet |
Negotiable |
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