(China (Mainland))
Product Summary
The MG150Q2YS65H is a Silicon N Channel IGBT.
Parametrics
MG150Q2YS65H absolute maximum ratings: (1)Collector-emitter voltage, VCES: 1200 V; (2)Gate-emitter voltage, VGES: ±20 V; (3)Collector current, DC, IC: 150A; 1ms, ICP: 300A; (4)Forward current, DC, IF: 150A; 1ms, IFM: 300A; (5)Collector power dissipation (Tc = 25℃), PC: 890 W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature range Tstg: -40 to 125℃; (8)Isolation voltage, VIsol: 2500(AC 1 minute) V; (9)Screw torque, Terminal: 3N·m; Mounting: 3N·m.
Features
MG150Q2YS65H features: (1)High input impedance; (2)Enhancement-mode; (3)The electrodes are isolated from case.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MG150Q2YS65H |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
MG150J1JS50 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG150J1ZS50 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG150Q2YS65H |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG1588A |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG1588C |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MG15C4MNI |
Other |
|
Data Sheet |
Negotiable |
|
||||
