Product Summary
The SI4425BDY-T1-E3 is a P-Channel 30-V (D-S) MOSFET.
Parametrics
SI4425BDY-T1-E3 absolue maximum ratings: (1)Drain-Source Voltage VDS: -30V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current (TJ = 150℃): -11.4 to -8.8A; (4)Pulsed Drain Current IDM: -50; (5)continuous Source Current (Diode Conduction): 2.5W; (6)Operating Junction and Storage Temperature Range TJ, Tstg: -55 to 150 ℃.
Features
SI4425BDY-T1-E3 features: (1)TrenchFET Power MOSFET; (2)Advanced High Cell Density Process.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SI4425BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 11A 2.5W |
Data Sheet |
|
|
|||||||||||||
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
Si4401BDY |
Other |
Data Sheet |
Negotiable |
|
||||||||||||||
SI4401BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 0.014Ohm |
Data Sheet |
|
|
|||||||||||||
SI4401BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 2.9W 14mohm @ 10V |
Data Sheet |
|
|
|||||||||||||
SI4401DDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 40V 16.1A P-CH MOSFET |
Data Sheet |
|
|
|||||||||||||
SI4401DY |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
|
|||||||||||||
SI4401DY-E3 |
Vishay/Siliconix |
MOSFET 40V 10.5A 3W |
Data Sheet |
Negotiable |
|