Product Summary

The SI4425BDY-T1-E3 is a P-Channel 30-V (D-S) MOSFET.

Parametrics

SI4425BDY-T1-E3 absolue maximum ratings: (1)Drain-Source Voltage VDS: -30V; (2)Gate-Source Voltage VGS: ±20V; (3)Continuous Drain Current (TJ = 150℃): -11.4 to -8.8A; (4)Pulsed Drain Current IDM: -50; (5)continuous Source Current (Diode Conduction): 2.5W; (6)Operating Junction and Storage Temperature Range TJ, Tstg: -55 to 150 ℃.

Features

SI4425BDY-T1-E3 features: (1)TrenchFET Power MOSFET; (2)Advanced High Cell Density Process.

Diagrams

SI4425BDY-T1-E3 P-Channel MOSFET

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI4425BDY-T1-E3
SI4425BDY-T1-E3
Vishay/Siliconix
MOSFET 30V 11A 2.5W
Data Sheet
0-1: $1.33
1-25: $1.02
25-50: $0.97
50-100: $0.92
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI4401DY-T1
SI4401DY-T1
Vishay/Siliconix
MOSFET 40V 10.5A 3W
Data Sheet
Negotiable 
SI4401DY-T1-GE3
SI4401DY-T1-GE3
Vishay/Siliconix
MOSFET 40V 10.5A 3.0W 15.5mohm @ 10V
Data Sheet
0-1560: $0.79
1560-2500: $0.64
2500-5000: $0.62
5000-7500: $0.61
SI4403BDY-T1-E3
SI4403BDY-T1-E3
Vishay/Siliconix
MOSFET 20V 9A 2.5W
Data Sheet
0-1: $0.60
1-25: $0.46
25-50: $0.43
50-100: $0.41
SI4410BDY-T1-E3
SI4410BDY-T1-E3
Vishay/Siliconix
MOSFET 30V 10A 2.5W
Data Sheet
0-1: $0.46
1-25: $0.43
25-50: $0.41
50-100: $0.39
SI4408DY-T1-E3
SI4408DY-T1-E3
Vishay/Siliconix
MOSFET 20 Volt 21 Amp 3.5W
Data Sheet
0-1: $1.38
1-25: $1.06
25-50: $1.01
50-100: $0.97
SI4406DY-T1-GE3
SI4406DY-T1-GE3
Vishay/Siliconix
MOSFET 30V 20A 3.5W 4.5mohm @ 10V
Data Sheet
0-810: $2.23
810-2500: $1.58