Product Summary

The MRF18060A is an N-Channel Enhancement–Mode Lateral MOSFET. Designed for PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.

Parametrics

MRF18060A absolute maximum ratings: (1)Drain–Source Voltage: 65 Vdc; (2)Gate–Source Voltage:–0.5 to +15 Vdc; (3)Storage Temperature Range:–65 to +150℃; (4)Operating Junction Temperature: 200 ℃.

Features

MRF18060A features: (1)Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz); (2)Internally Matched, Controlled Q, for Ease of Use; (3)High Gain, High Efficiency and High Linearity; (4)Integrated ESD Protection; (5)Designed for Maximum Gain and Insertion Phase Flatness; (6)Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power; (7)Excellent Thermal Stability; (8)Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

Diagrams

MRF18060A Test Fixture Schematic 

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF18060ALR3
MRF18060ALR3

Freescale Semiconductor

Transistors RF MOSFET Power 60W GSM 1.8GHZ

Data Sheet

Negotiable 
MRF18060ALR5
MRF18060ALR5

Freescale Semiconductor

Transistors RF MOSFET Power 60W GSM 1.8GHZ

Data Sheet

Negotiable 
MRF18060ALSR3
MRF18060ALSR3

Other


Data Sheet

Negotiable 
MRF18060AR3
MRF18060AR3

Other


Data Sheet

Negotiable 
MRF18060ASR3
MRF18060ASR3

Other


Data Sheet

Negotiable 
MRF18060A
MRF18060A

Other


Data Sheet

Negotiable