(China (Mainland))
Product Summary
The FM25V10-G is a 1-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories. Unlike Serial Flash, the FM25V10-G performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been transferred to the device. The next bus cycle may commence without the need for data polling. The FM25V10-G offers very high write endurance, orders of magnitude more endurance than Serial Flash. Also, F-RAM exhibits lower power consumption than Serial Flash.
Parametrics
FM25V10-G absolute maixmum ratings: (1)VDD Power Supply Voltage with respect to VSS: -1.0V to +4.5V; (2)VIN, Voltage on any pin with respect to VSS: -1.0V to +4.5V; (3)TSTG, Storage Temperature: -55℃ to + 125℃; (4)TLEAD Lead Temperature (Soldering, 10 seconds): 260℃; (5)VESD Electrostatic Discharge Voltage: 200V.
Features
FM25V10-G features: (1)Organized as 131,072 x 8 bits; (2)High Endurance 100 Trillion (1014) Read/Writes; (3)10 Year Data Retention; (4)NoDelay. Writes; (5)Advanced High-Reliability Ferroelectric Process; (6)Up to 40 MHz Frequency; (7)Direct Hardware Replacement for Serial Flash; (8)SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1).
Diagrams
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 FM25V10-G |
Ramtron |
F-RAM 1M (128Kx8) 2.0-3.6V F-RAM |
Data Sheet |
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FM25V10-GTR |
Ramtron |
F-RAM 1M (128Kx8) 2.0-3.6V F-RAM |
Data Sheet |
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